High temperature superconductive flux gate magnetometer

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

An Integrated High-Temperature Superconductive Photomixer/Antenna

II. THEORY AND SIMULATION Abstract— A novel THz device concept called as CW HTS (high temperature superconductive) photomixer/antenna is proposed. Optical heterodyne photomixing in the DC-biased HTS strip has been employed to create THz signal, and the size of the strip on the grounded dielectric substrate is designed to have an efficient broadside radiation. Incorporating the HTS microstrip co...

متن کامل

Superconductive Digital Magnetometers with Single-Flux-Quantum Electronics

Superconducting Quantum Interference Devices (SQUIDs) are known to be the most sensitive magnetometers, used in a wide range of applications like biomagnetism, geomagnetism, Non Destructive Evaluation (NDE), metrology or fundamental science. For all these applications, the SQUID sensor is used in analog mode and associated with a carefully designed room-temperature control and/or feedback elect...

متن کامل

High Sample Rate Optically Pumped Helium Magnetometer

Optically pumped helium magnetometers are important instruments whichhave many applications in military, mass spectroscopy and space applications. In thispaper, the working principles of helium magnetometers have been explained. There isalso an introduction of a new method for finding the resonant frequency, which hasadvantages to the typical method such as more sample r...

متن کامل

Bias-Temperature Instability in the High-k/Metal Gate Stacks

Besides the negative-bias temperature (NBTI) effect that is seen in the conventional polysilicon on SiO 2 or SiON gate stack, the high-k/metal gate stack also exhibits positive-bias temperature instability (PBTI) which has an adverse impact on the operation of the n-MOSFET. Significant threshold-voltage V t shift but negligible transconductance g m degradation was observed after PBTI stress. On...

متن کامل

High temperature stability in lanthanum and zirconia-based gate dielectrics

Gate dielectrics composed primarily of lanthana and zirconia were prepared by reactive evaporation. The stability of the layers during high temperature anneals was investigated. By controlling the oxygen partial pressure during heat treatment, lanthana and zirconia films could be protected against reaction with the underlying Si substrate and against the growth of low-« interface layers. The el...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Magnetics

سال: 1991

ISSN: 0018-9464,1941-0069

DOI: 10.1109/20.133854